MEMS Foundry Development
MEMS Infinity offers one-stop support from design consideration to prototype development. In addition to advanced technology in each process, such as thin film generation and Si DRIE processing processing, we provide manufacturing equipment from our affiliated companies to meet your most demanding requirements.
Service flow
Good communication is our foundation with customers. We meet with you to learn about the specific requirements of your MEMS device. We listen to your future plans. And then we propose a solution that checks all the boxes. When you work with MEMS Infinity, you'll find that the lines of communication are always open.
We've been providing PZT film deposition and etching at our MEMS foundry since 2010. We've proven ourselves in the field by mass producing CRM/CMS gyroscopes--which are now integral to some of the world's highest-performance products and systems.
We build the manufacturing tools that meet worldwide demand for MEMS--and we make them available to MEMS Infinity customers.
Sensor/MEMS device application examples
When you work with MEMS Infinity, you get best-of-breed solutions. That includes having access to the premium-quality manufacturing tools that are widely used throughout the MEMS industry.
Si DRIE is a critical offering in MEMS manufacturing. Our company developed and sold the world's first mass-produced Bosch process Si DRIE equipment, which we provide under the SPT brand name and sell in Japan.
When you work with MEMS Infinity, you gain access to ASE-Predeus, our high-precision Si DRIE system.
We've improved the plane uniformity of ASE-Predeus from ±4% to ±3% compared to the conventional ASE-Pegasus. And we've reduced angle control to less than 0.1° at 8 inches. That's an innovation that helps our customers.
| process | Process specifications | |
|---|---|---|
| etching | Si deep etching | L/S(min)：1.5μm Hole: φ10μm Maximum aspect ratio: 100 Through-hole processing available |
| dry etching | L/S(min)：3μm Metal film, oxide film, SiC, PZT |
|
| sacrificial layer etching | L/S(min)：1μm | |
| Wet etching | Au, AI, Ti, Cr etc | |
| photolithography | regist coat | Film thickness (max): 10μm Uniformity: 5% Can be spray coated |
| Exposure (mirror projection) | L/S(min)：1.5μm | |
| Exposure (contact) | L/S(min)：3μm Double-sided exposure possible |
|
| Exposure (stepper) | L/S(min)：1μm | |
| development | Au, AI, Ti, Cr etc. | |
| Film deposition (sputtering) | PZT sputtering *1 | Film thickness: 1~5μm *Standard film thickness: 3μm Relative permittivity: 900 Note 1 Piezoelectric constant (d31): 220-240pm/V Note 2 The values of Notes 1 and 2 depend on the SSP standard film thickness and film composition. |
| Metal sputtering *2 | Film thickness: 10nm to 5μm Uniformity: ±10% Au, Pt, AI, Cr, Ti |
|
| Oxide sputtering *3 | Film thickness: 2μm or less Uniformity: ±10% |
|
| Film deposition (CVD) | PE-CVD SiO2 (TEOS) *3 | Film thickness: 10nm to 5μm Uniformity: ±5% |
| PE-CVD SiN *3 | Film thickness: 10nm to 5μm Uniformity: ±5% *Stress control possible |
|
| Film deposition (ALD) | Atomic layer deposition *4 | AI203 and others |
| Oxidation/annealing | thermal oxidation | Film thickness: 1μm or less Uniformity: 10% Wet/Dry mixture |
| Anneal | ||
| bonding | Anodic bonding (can be sealed) | Sealing internal pressure: >0.01Pa |
| glass processing | Blasting | L/S(min)：15μm Hole (min): φ50μm |
| wet etching | L/S(min)：10μm Depth (max): 300μm |
|
| backend | dicing | |
| back grind | In-plane distribution: 5μm | |
| evaluation | XRF, EDX Zygo, SEM Surface profilometer Laser microscope etc. |
Wafer size: 4 to 8 inches
Please feel free to contact us regarding processes not listed.
*1 The characteristics of the piezoelectric thin film are typical values for our cantilever.
*2 Please feel free to contact us regarding Au, Pt, Al, Ti, Cr and other metal films.
*3 Insulating film is a typical value for various Film deposition methods. Please contact us for more details.
*4 Please feel free to contact us regarding Al2O3 and other protective films.
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